Low-noise photodiode-amplifier circuit
نویسندگان
چکیده
منابع مشابه
Low Noise Amplifier Circuit
By Aalay Kapadia in Electrical Engineering and Electronic Engineering. The circuit topology we used for this project is a cascode LNA with inductive source. Typical parameters are maximum transducer gain, output power , low noise, circuit stability. Here a LNA is designed to obtain an optimum gain with minimum.
متن کاملPhotodiode Amplifier Circuit With Improved Sensitivity
of photodiode and transimpedance amplifier on a 12.4 Moisture Sensitivity and Soldering. narrowly-focused beam falling only on the photodiode provides improved settling times from allanalog circuits to data conversion base circuits. Q1 and Q2 form a "cascode" amplifier circuit. To compensate for the high-frequency rolloff of the photodiode, U1B is configured as Daylight modifications will drama...
متن کاملA Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...
متن کاملInvestigation of Constant Transconductance Circuit for Low Power Low-Noise Amplifier
In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for lownoise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by the constant gm bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed t...
متن کاملA Broadband Low-Noise-Amplifier
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1994
ISSN: 0018-9200
DOI: 10.1109/4.278362